Phase memory is a type of non -ruling memory that uses the properties of materials that change their phase (PCM) to the transition between the amorphous state (atoms are disordered) and crystalline (there is a long order in the location of atoms). Such a change creates a reversible electrical property that can be used to store and extract data.
Despite the fact that this area is only developing, the phase memory has the potential to radically change the sphere of data storage due to the high storage density, rapid reading and recording. However, the complex switching mechanism and methods of manufacturing such materials create problems for mass production.
In recent years, two-dimensional transitional metal-dihekogenids have become promising materials for phase memory. Researchers from the University of Tokhoku revealed the potential for the use of large areas from two-dimensional Tetra-Chalcogenides. With the help of this technique, they created the material – niobytelluride (NBTE4), which is released by ultrack with a melting temperature of approximately 447 ºC.
“The fusion method is widely used to apply thin layers of material to the substrate, which allows you to accurately control the thickness and composition of the film,” says Yi Shuan, associate professor of the Institute for the Study of Materials of the University Tokhoku. “The nbte4 films we received were originally amorphous, but could crystallize in a two -dimensional layered crystalline phase at temperatures above 272 ºC.”
Unlike traditional PCM materials, such as GE2SB2TE5, NBTE4 combines a low melting point and high crystallization temperature. This unique combination provides reduced energy consumption and improved thermostability in the amorphous phase.
After the creation of NBTE4, scientists appreciated its performance when switching. During the tests, the material showed a significant decrease in energy consumption compared to traditional compounds of phase memory. It is expected that the NBTE4 will save the data for 10 years at a temperature of up to 135 ºC, which is better than GST (85 ºC). This indicates high thermal stability and possible use of NBTE4 at high temperatures, for example, in the automotive industry.
“We have expanded the possibilities for developing a high -performance phase memory,” adds Shuan. “Taking into account the low melting point, high crystallization temperature and excellent performance when switching, NBTE4 is released as an ideal material capable of responding to some of the current challenges facing PCM.”