Physicists have developed a new type of crystalline film for semiconductors, allowing electrons to move seven times faster than in traditional semiconductors, potentially revolutionizing electronic devices. The research, published in Materials Today Physics, details the creation of a christmas material film called Ternary Tetradimitis, with a thickness of only 100 nanometers, created using molecular beam epitaxy to minimize defects.
When an electric current was applied to the film, scientists measured electron speeds of 10,000 cm²/B -s, significantly higher than the 1,400 cm²/B -C speed in standard silicon semiconductors. The high electron mobility in the film results in better conductivity, leading to more efficient electronic devices that generate less heat and consume less energy.
The crystalline structure of the film with minimal defects allows electrons to move freely, likened to a “Highway without traffic jams” by researchers. Potential applications of this technology include wearable thermoelectric devices and spintronics devices utilizing electron spin to process information. Electron mobility was measured in a cold environment under a magnetic field, with scientists observing quantum vibrations reacting to changes in electrical resistance.
Any defects in the film can impact electron mobility, prompting scientists to refine the film creation process for better results. The study highlights the potential for improved technologies in spintronics and thermoelectric devices, paving the way for thinner films and enhanced electronic capabilities through precise system management.