New Type of Phase Memory Developed at Stanford University
Scientists from Stanford University have made a groundbreaking discovery in the field of computer memory. The development of a new type of phase memory promises to revolutionize the processing of large amounts of data, leading to high-speed and energy-efficient memory.
Innovative Memory Technology
The new material, described in the journal Nature Communications, enables the switching between high and low resistance conditions, thereby creating data. This breakthrough opens up possibilities for enhancing artificial intelligence systems and processing big data. According to Professor Eric Pop from Stanford, the research team is not only improving a single indicator, such as speed or reliability, but multiple characteristics simultaneously.
Improving the Effectiveness of Calculations
In modern computers, the storage and processing of data are separate, resulting in delays. However, this new type of memory, as co-author Syandzhina Wu explains, “will bring together memory and processing, reducing energy consumption and processing time.”
Promising Alloy GST467
The key component of this new technology is the GST467 alloy developed at the University of Maryland. This alloy possesses an exceptionally rapid switching speed and is integrated into the super-merciful structure, which has been previously successful in the field of non-volatile memory. Co-author Asir Intisar Khan notes, “The unique composition of GST467 provides it with high switching speed, good endurance, stability, and durability.”
A New Level of Performance
The GST467 super-resolution achieves high stability and operates at a voltage below 1 volt, which is crucial for low-energy technologies. Professor Pop emphasizes, “Switching for dozens of nanoseconds at a voltage of less than one volt is a remarkable achievement.”
In addition, this new memory technology offers a high density of memory cell placement in a small space. The size of the cells is reduced to 40 nanometers