Scientists of Tel Aviv University in Israel created the world’s smallest technology in the world with a thickness of only two atoms. The results of the study published in the SCIENCE journal suggest that electrical information can be stored in the finest device known to science. Due to the unusual implementation of memory by slipping atomic layers relative to each other, the authors called the new concept with slidtronics (from the English. Slide – “Slip”).
The film consists of two layers of a hexagonal structure formed by boron and nitrogen atoms. In a natural three-dimensional state, such a material consists of a large number of layers, each layer, each layer is rotated 180 degrees relative to the other, that is, an anti-parallel configuration is formed. The scientist managed to create a parallel configuration, when one layer is slightly shifted relative to the other so that the boron and nitrogen atoms that have opposite charges are opposite each other and held van der Waals. Half of each layer atoms are located opposite the empty space – the hexagon center. In such a configuration, only boron atoms participate in the upper layer in the overlap, and in the lower – nitrogen atoms.
The symmetry disorder that is missing in natural crystals causes an electrical charge to be reorganized between layers and generate tiny internal electrical polarization, perpendicular to the layer plane. If you apply an external electric field in the opposite system, two layers begin to slide relative to each other to switch polarization orientation. Moreover, such a configuration is saved, even if the external field is disabled.
in other words, a two-layer material is a ferroelectric when spontaneous polarization occurs in a crystal, despite the fact that the boron nitride in general is not a ferroelectric. Segroelectrics have the property of the hysteresis (switching under the action of the external field), which makes thin-film devices suitable for the manufacture of ferroelectric RAM. In modern technology, thick three-dimensional systems are used, so “slidter” films contribute to even greater miniaturization of devices.
In addition, from such a material you can create a memory device based on the tunnel effect. Segroelectrics do not conduct an electric current, however, through thin films, electrons can slip or tunneling due to their quantum nature. Such a tunnel current depends on the voltage applied to the ferroelectric, that is, the information record is carried out by applying an external field, and reading through the measurement of the tunnel current. Such memory is characterized by extremely low power consumption, which distinguishes it from modern devices of RAM.